B647 Datasheet. Part #: B647. Datasheet: 49Kb/3P. Manufacturer: Shenzhen Jingdao Electronic Co.,Ltd. Description: PNP Power Transistor. 1 Results. B647 Datasheet B647 Datasheet, Equivalent, Cross Reference Search Type Designator: B647 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.8 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 5 V
B647_135369.PDF Datasheet Download
2SB647 Transistor Explained / Description: B647 is an PNP transistor available in TO-92L or TO-92MOD package. This transistor is primarily designed to use in L.F power amps but due to its good specs it can also be used in wide variety of general purpose applications. 1. Structure : A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector). 2. Polarity : In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. the B647 is a silicon PNP transistor, Uce = 80V, Ic = 1A, applications: general purpose Description PNP Power Transistor B647 Datasheet (HTML) - Shenzhen Jingdao Electronic Co.,Ltd B647 Product details Features： High switching speed Wide safe operation area Applications ： Electronical Ballasts for fluorescent lighting Charger and Switch mode power supplies Similar Part No. - B64 7 More results Similar Description - B647
2SB647 PNP General Purpose Transistor Datasheet
Part Number: B647, 2SB647 Function: -80V, -1A, PNP Transistor Package: TO-92MOD Type Manufacturer: Hitachi Semiconductor Images: Description B647 is -80V, -1A, Silicon PNP Epitaxial Transistor. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor. Characteristics: 1. the B647 is a silicon PNP transistor, Uce = 80V, Ic = 1A, applications: general purpose What is B647? This is PNP Transistor, 2SB647. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor. [PDF] Complete Technical Details can be found in the B647 datasheet provided at this page. Datasheet Summary in PDF File 2SB647 2SB647A Silicon PNP Epitaxial Application Low frequency power amplifier Complementary. Part Number: B647, 2SB647 Function: -120V, -1A, PNP Transistor Package: TO-92MOD Type Manufacturer: Hitachi Semiconductor Images: Description The B647 is -120V, -1A, PNP Transistor. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.
Datasheet b647 pdf ( даташит ) hitachi semiconductor
Part Number: B647A Function: -100V, PNP Transistor Package: TO-92 Type Manufacturer: Renesas Electronics Image and Pinouts: Description This is -120V, -1A, Silicon PNP Epitaxial Transistor. Features 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage: Vcbo = - 120 V Download. File Size: 33Kbytes. Page: 6 Pages. Description: Silicon PNP Epitaxial. Manufacturer: Hitachi Semiconductor.
The B647 electronic component is brought into production by HITACHI/RENESAS, included in Transistors. Each device is available in a small TO-92L package and specified over the extended temperature range of -40°C to 105°C (TA). Categories. Transistors. Manufacturer. B647 Datasheet : Silicon PNP Epitaxial, B647 PDF VIEW Download Renesas Electronics, B647 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits. Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
bd 647 pdf
B647 datasheet, B647 PDF, B647 Pinout, Equivalent, Replacement - PNP Transistor - 2SB647 - Hitachi Semiconductor, Schematic, Circuit, Manual. B647 Datasheet PDF - PNP Transistor - 2SB647. What is B647? This electronic component, produced by the manufacturer "Hitachi Semiconductor",. Transistor Catalog 2SB647 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SB647 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.9 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Collector Current |Ic max|: 1 A Max.
