2N5401 Datasheet (HTML) - NXP Semiconductors 2N5401 Product details DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications. Similar Part No. - 2N5401 DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 transistor 2N5401 FEATURES PINNING Low current (max. 300 mA) High voltage (max. 150 V). APPLICATIONS General purpose switching and amplification Telephony applications. DESCRIPTION
2N5401 Datasheet PDF (162 KB) KEC Pobierz z Elenota.pl
2N5401 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N5401 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.31 W Maximum Collector-Base Voltage |Vcb|: 160 V Maximum Collector-Emitter Voltage |Vce|: 150 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.6 A Max. 2N5401 Amplifier Transistor Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: PC (max)=625mW Suffix "-C" means Conter Collector (1. Emitter 2. Collector 3. Base) PNP Epitaxial Silicon Transistor TO-92 Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted device data sheet for actual part marking. Pb−Free indicator, "G" or microdot " ", may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DOCUMENT NUMBER: 98ASB42226B DESCRIPTION: About Motorola, Inc. Motorola, Inc. was an American multinational telecommunications company that was founded in 1928. It was headquartered in Schaumburg, Illinois and was one of the largest providers of mobile phones, telecommunication equipment, and semiconductors. Throughout its history, Motorola was known for its innovation in the field of.
4816 MOSFET PDF
MMBT5401 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 2004 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: MMBT5401/D Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. www.onsemi.com 2 and is not for resale in any manner. PUBLICATION ORDERING INFORMATION. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor. P.O. Box 5163, Denver, Colorado 80217 USA. Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada. Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada. Description. The 2N5401HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/014 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment. Datasheet. CAD Model. Overview Technical Documentation. Overview. This PNP Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications. Waiting. Product Overview. Features.
DA0998_1231356.PDF Datasheet Download
Part #: 5401. Download. File Size: 97Kbytes. Page: 4 Pages. Description: Quad 2-Input NAND Gates with Open-Collector Outputs. Manufacturer: National Semiconductor (TI). LMH5401 data sheet, product information and support | TI.com Home RF & microwave RF amplifiers RF FDAs LMH5401 8-GHz Ultra wideband fully differential amplifier Data sheet LMH5401 8-GHz, Low-Noise, Low-Power, Fully-Differential Amplifier datasheet (Rev. D) PDF | HTML Product details Find other RF FDAs Technical documentation
2N5401 Description. The 2N5401 is a high voltage PNP transistor that can be used in a variety of general purpose electronic applications that are operating from 150V or below. It is often used in telephone circuits and simple switching applications or amplification on high voltage. The 2N5401 is also readily available and easy to work with. 2N5401 is specifically designed to be used in high voltage applications where load consumes very less power (i.e. Current drawn by load is low). These types of circuits can be seen in telephone systems. It can also be used when you want a simple switching device for high voltage loads. Also the component is cheap and easy to work with.
2N5401 PNP Small Signal Transistor Datasheet
1 View All Overview Features and Benefits Product Details Latch-up immune under all circumstances Human body model (HBM) ESD rating: 8 kV Low on resistance (6.5 Ω) ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation 48 V supply maximum ratings Fully specified at ±15 V, ±20 V, +12 V, and +36 V V SS to V DD analog signal range 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407, 1N5408 www.vishay.com Vishay General Semiconductor Revision: 01-Aug-13 3 Document Number: 88516 For.
