IRFZ44N Product details Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Description N-channel enhancement mode TrenchMOS transistor IRFZ44N Datasheet (HTML) - NXP Semiconductors IRFZ44N Product details GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology.
IRFZ44N_4558749.PDF Datasheet Download
IR MOSFET™ N-channel Power MOSFET ; TO-220 package; 17.5 mOhm; The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V. However a driver circuit is needed if the MOSFET has to be switched in completely. Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44N Datasheet PDF ( Pinout ) 55V, 49A, HEXFET Power MOSFET
IRFZ44NPbF Product Data Sheet Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRFZ44N Datasheet by NXP USA Inc. View All Related Products| Download PDF Datasheet I made SYMBOL PARAMETE MAX. ect power ope using VD5 Drainrsourc age 55 V e device |D Drain curren DC) 49 A resistance PM Total pcwer palicn 110 W des giving ' Junction tem ure 175 'C 2W. It is RDSION, Drainrsourc rate 22 mg hed mode resistance 65 = 10 V ral purpose IRFZ44N N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves Fig. 1 - Output Characteristics I D — Drain-toSource Current (A) VDS — Drain-to-Source Voltage (V) ID — Drain Current (A) Fig. 3 - On Resistance vs. Drain Current 0 500 1500 1000 2500 2000 3000 3500 4000 0 10 2030 40 5060 VDS — Drain-to-Source Voltage (V) This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/04.
(PDF) IRFZ44 Datasheet Power MOSFET ( Transistor )
Features and Technical Specifications: The following are the features and technical specifications of IRFZ44N MOSFET. It is a small signal N-channel Power MOSFET with a high drain current and fast switching speed available in the To-220 package. The maximum drain current (continuous) Id is 49mAmps. The peak pulse drain current is 160 Amps. Datasheet pdf. Equivalent Type Designator: IRFZ44N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 94 W Maximum Drain-Source Voltage |Vds|: 55 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs (th)|: 4 V Maximum Drain Current |Id|: 49 A
The IRFZ44N is a MOSFET that has n-channel enhancement modes in the TO-220 package. It is an ongoing drain current that is 49A at 25 °C, and 35A at 100 °C. This makes it a perfect component for power supplies that switch modes and other all general-purpose switching. It operates at 175°C which is why a heatsink is crucial. The IRFZ44N is a MOSFET power transistor made by Infineon Technologies. It's known for its capacity to switch high voltage and current levels. MOSFET means Metal Oxide Semiconductor Field Effect Transistor, a transistor type that has low resistance to output and high resistance to input. The IRFZ44N can handle a maximum voltage of 55 volts and.
IRFZ44N_4558748.PDF Datasheet Download
Datasheet Similar IRFZ44NPBF Infineon Technologies In Stock: 17,223 Unit Price: $1.31000 Datasheet The IRFZ44N MOSFET is designed for high-power applications, with the ability to handle a drain-to-source voltage of up to 55 volts. Additionally, it can be triggered with a minimal gate voltage ranging from 2 to 4 volts and above it could be used, making it suitable for low-voltage control. Its maximum operating current of 49 amps is achieved.
